HT Semiconductor s9014 free download

File name s9014.pdf

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 A Collector cut-off current ICEO VCE=35V , IB=0 0.1 A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 A DC current gain hFE VCE=5V, IC= 1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100