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Descr: . Electronic Components Datasheets Active components Transistors HT Semiconductor ktc4373.pdf
Group:Electronics > Components > Transistors
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KTC4373 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Voltage Application 2. COLLECTOR High Voltage High Transition Frequency 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=120V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE VCE=5V, IC=100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 1 V Base-emitter voltage VBE VCE=5V, IC=500mA 1 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 30 pF Transition frequency fT VCE=5V,IC= 500mA 120 MHz CLASSIFICATION OF hFE RANK O Y RANGE 80

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