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Now downloading free:International Rectifier 2n6768 irf350

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Mfg:International Rectifier
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Descr: . Electronic Components Datasheets Active components Transistors International Rectifier 2n6768_irf350.pdf
Group:Electronics > Components > Transistors
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PD - 90339F IRF350 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- tance combined with high transconductance; superior re- TO-3 verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings stability of the electrical parameters. n Dynamic dv/dt Rating n Hermetically Sealed They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio n Simple Drive Requirements amplifiers and high energy pulse circuits. n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25

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