| File information: | |
| File name: | irff9210.pdf [preview irff9210] |
| Size: | 130 kB |
| Extension: | |
| Mfg: | International Rectifier |
| Model: | irff9210 🔎 |
| Original: | irff9210 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier irff9210.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 09-10-2021 |
| User: | Anonymous |
| Multipart: | No multipart |
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| Decompress result: | OK | |
| Extracted files: | 1 | |
File name irff9210.pdf PD - 90382 REPETITIVE A ALANCHE AND dv/dt RATED V HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF9210 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9210 -200V 3.0 -1.5A The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features: age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings and temperature stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switch- n Hermetically Sealed ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = -10V, TC = 25 | ||

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