Microsemi 2n3019 2n3057 2n3700 free download

File name 2n3019_2n3057_2n3700.pdf

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 140 Vdc TO-39* (TO-205AD) Emitter-Base Voltage VEBO 7.0 Vdc 2N3019, 2N3019S Collector Current IC 1.0 Adc Total Power Dissipation @ TA = +250C(1) W 2N3019; 2N3019S 0.8 2N3057A 0.4 TO- 18* (TO-206AA) 2N3700 0.5 2N3700 2N3700UB PT 0.4 @ TC = +250C(2) W 2N3019; 2N3019S 5.0 2N3057A 1.8 2N3700 1.8 TO-46* (TO-206AB) 2N3700UB 1.16 0 2N3057A Operating & Storage Jct Temp Range TJ, Tstg -55 to +175 C 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C. 3 PIN SURFACE MOUNT* 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C. 2N3700UB *See appendix A for package