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Now downloading free:Keithley 4200 CV AN

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4200 CV AN.pdfNumber 2239 Application Note Gate Dielectric Capacitance-Voltage Series Characterization Using the Model 4200 Semiconductor Characterization System Introduction Understanding MOS-Capacitor Maintaining the quality and reliability of gate oxides is one of C-V Measurements the most critical and challenging tasks in any semiconductor fab. C-V measurements are typically made on a capacitor-like device, With feature sizes shrinking to 0.18

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