HT Semiconductor mmbt2222a free download

File name mmbt2222a.pdf

MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 250 mW RJA Thermal Resistance, Junction to Ambient 500 /W TJ Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 V * Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.01 A Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 A Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 A * hFE(1) VCE=10V, IC= 150mA 100 300 DC current gain hFE(2) VCE=10V, IC= 0.1mA 40 * hFE(3) VCE=10V, IC= 500mA 42 * IC=500 mA, IB= 50mA