Microsemi 2n3749 2n2880 free download

File name 2n3749_2n2880.pdf

TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level JAN 2N2880 2N3749 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 110 Vdc Emitter-Base Voltage VEBO 8.0 Vdc Base Current IB 0.5 Adc Collector Current IC 5.0 Adc Total Power Dissipation @ TA = 250C (1) 2.0 PT W @ TC = 1000C (2) 30 Operating & Storage Junction Temperature Range 0 Top, Tstg -65 to +200 C TO-59* THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction-to-Case 0 RJC 3.33 C/W 1) Derate linearly 11.4 mW/0C for TA > 250C 2) Derate linearly 300 mW/0C for TC > 1000C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 80 Vdc IC = 100 mAdc Collector-Emitter Breakdown Voltage V(BR)CBO 110 Vdc IC = 10