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File name:TDA7560.pdf
Size:478 kB
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Mfg:ST
Model:TDA7560 🔎
Original:Datasheet 🔎
Descr:4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD
Group:Electronics > Components > Integrated circuits
Uploaded:06-05-2005
User:dupator
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File name TDA7560.pdf

® TDA7560 4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD PRODUCT PREVIEW SUPERIOR OUTPUT POWER CAPABILITY: 4 x 50W/4 MAX. 4 x 45W/4 EIAJ 4 x 30W/4 @ 14.4V, 1KHz, 10% 4 x 80W/2 MAX. 4 x 77W/2 EIAJ 4 x 55W/2 @ 14.4V, 1KHz, 10% EXCELLENT 2 DRIVING CAPABILITY HI-FI CLASS DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LOW EXTERNAL COMPONENT COUNT: ­ INTERNALLY FIXED GAIN (26dB) ­ NO EXTERNAL COMPENSATION ­ NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER PROTECTIONS: OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER LOAD DUMP VOLTAGE BLOCK AND APPLICATION DIAGRAM Vcc1 Vcc2 MULTIPOWER BCD TECHNOLOGY MOSFET OUTPUT POWER STAGE FLEXIWATT25 ORDERING NUMBER: TDA7560 FORTUITOUS OPEN GND REVERSED BATTERY ESD DESCRIPTION The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio The fully complementary P-Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances. 470µF ST-BY 100nF MUTE HSD HSD OUT1+ IN1 0.1µF OUT1PW-GND OUT2+ IN2 0.1µF OUT2PW-GND OUT3+ IN3 0.1µF OUT3PW-GND OUT4+ IN4 0.1µF AC-GND 0.47µF SVR 47µF TAB S-GND OUT4PW-GND D94AU158B November 1999 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/10 TDA7560 ABSOLUTE MAXIMUM RATINGS Symbol VCC VCC (DC) VCC (pk) IO Operating Supply Voltage DC Supply Voltage Peak Supply Voltage (t = 50ms) Output Peak Current: Repetitive (Duty Cycle 10% at f = 10Hz) Non Repetitive (t = 100µs) Power dissipation, (Tcase = 70°C) Junction Temperature Storage Temperature Parameter Value 18 28 50 9 10 80 150 ­ 55 to 150 Unit V V V A A W °C °C Ptot Tj Tstg PIN CONNECTION (Top view) 1 25 V CC AC-GND P-GND3 V CC P-GND2 P-GND1 P-GND4 S-GND OUT3- OUT2- OUT1- OUT2+ OUT1+ OUT3+ THERMAL DATA Symbol Rth j-case Parameter Thermal Resistance Junction to Case Max. Value 1 Unit °C/W 2/10 OUT4+ D94AU159A OUT4- ST-BY MUTE HSD SVR TAB IN1 IN2 IN4 IN3 TDA7560 ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600; RL = 4; Tamb = 25°C; Refer to the test and application diagram, unless otherwise specified.) Symbol Iq1 VOS dVOS Gv dGv Po Parameter Quiescent Current Output Offset Voltage During mute ON/OFF output offset voltage Voltage Gain Channel Gain Unbalance Output Power VS = VS = VS = VS = VS = VS = VS = VS = Po EIAJ Po max. THD eNo SVR fch Ri CT ISB Ipin4 VSB out VSB in AM VM out VM in VAM in EIAJ Output Power (*) Max. Output Power (*) Distortion Output Noise Supply Voltage Rejection High Cut-Off Frequency Input Impedance Cross Talk St-By Current Consumption St-by pin Current St-By Out Threshold Voltage S

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