Microsemi 2n3743 2n4930 2n4931 free download

File name 2n3743_2n4930_2n4931.pdf

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage VCEO 300 200 250 Vdc Collector-Base Voltage VCBO 300 200 250 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 200 mAdc Total Power Dissipation @TA = +250C 1 1.0 W PT @TC = +250C 2 5.0 W Operating & Storage Junction Temperature Range 0 TJ, Tstg -65 to +200 C TO-39* THERMAL CHARACTERISTICS (TO-205AD) Characteristics Symbol Max. Unit 0 Thermal Resistance Junction-to-Case RJC 35 C/W 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 1.0 mAdc 2N3743 300 V(BR)CEO Vdc 2N4930 200 2N4931 250 Collector-Emitter Breakdown Voltage IC = 100