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NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low­frequency output amplifier, DC converter, and strobe applications. Features: D High Collector Current: IC = 5A Max D Low Collector­Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Base Voltage, VCBO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27V Collector­Emitter Voltage, VCEO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current NTE11 NTE12 Symbol ICBO VCB = 10V, IE = 0 VCB = 10V, IE = 0 ­ ­ ­ ­ 0.1 100 Test Conditions Min Typ Max Unit µA nA Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified) Parameter Emitter Cutoff Current NTE11 NTE12 Collector­Emitter Voltage NTE11 NTE12 Emitter­Base Voltage DC Current Gain NTE11 NTE12 NTE11 Only Collector­Emitter Saturation Voltage NTE11 NTE12 Transition Frequency NTE11 NTE12 Collector Output Capacitance NTE11 NTE12 Cob VCB = 20V, IE = 0, f = 1MHz VCB = 20V, IE = 0, f = 1MHz ­ ­ ­ 60 50 ­ pF pF fT VCB = 6V, IE = 50mA, f = 200MHz VCB = 6V, IE = 50mA, f = 200MHz ­ ­ 150 120 ­ ­ MHz MHz hFE2 VCE(sat) IC = 3A, IB = 100mA, Note 1 IC = 3A, IB = 100mA, Note 1 ­ ­ ­ 0.4 1 1.0 V V VEBO hFE1 VCE = 2V, IC = 500mA, Note 1 VCE = 2V, IC = 2A, Note 1 VCE = 2V, IC = 2A, Note 1 340 180 150 ­ ­ ­ 600 625 ­ VCEO IC = 1mA, IB = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 20 18 7 ­ ­ ­ ­ ­ ­ V V V Symbol IE