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DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES · Low VCE(sat): VCE(sat) 0.3 V · High hFE: · On-chip dumper-diode · Auto-mounting possible in radial taping specifications @IC = 1.5 A, IB = 10 mA hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Ta = 25°C PW 300 µs, duty cycle 10% Conditions Ratings 120 100 7.0 ±2.5 ±5.0 1.0 1.8 150 -55 to +150 Unit V V V A A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15604EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4814 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1* hFE2* VCE(sat)* VBE(sat)* fT Cob ton tstg tf Conditions VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 1.0 A VCE = 2 V, IC = 1.5 A IC = 1.5 A, IB = 10 mA IC = 1.5 A, IB = 10 mA VCE = 10 V, IC = 1.0 A VCE = 10 V, IE = 0 , f = 1 MHz IC = 1.5 A, IB1 = -IB2 = 10 mA RL = 8.0 , VCC = 12 V Refer to the test circuit. 0.5 60 40 0.5 2.0 300 250 700 600 0.3 1.3 MIN. TYP. MAX. 50 50 1,200 Unit µA µA - - V V MHz pF µs µs µs * Pulse test PW 350 µs, duty cycle 2% PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION Electrode Connection 1. Base 2. Collector 3. Emitter 0.7 MAX. EQUIVALENT CIRCUIT 2 Data Sheet D15604EJ2V0DS 2SC4814 TYPICAL CHARACTERISTICS (Ta = 25°C) ° Total Power Dissipation PT (W) Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Single pulse Transient Thermal Resistance Rth(j-a) (°C/W) Collector Current IC (A) IC Derating dT (%) Single pulse Collector to Emitter Voltage VCE (V) Pulse Width PW (s) Pulse test Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector Current IC (A) DC Current Gain hFE Data Sheet D15604EJ2V0DS 3 4 Turn-On Time ton (µs) StorageTime tstg (µs) Fa