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DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost reduction. FEATURES · High hFE and low VCE(sat): VCE(sat) 0.3 V @IC = 3.0 A, IB = 0.15 A hFE 100 @VCE = 2.0 V, IC = 1.0 A · Available for auto mount in radial taping specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT Tj Tstg Ratings 100 60 7.0 5.0 10 2.5 1.8 150 -55 to +150 Unit V V V A A A W °C °C * PW 300 µs, duty cycle 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15605EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4815 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° Parameter Collector to emitter voltage Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS) Conditions IC = 5.0 A, IB = 0.5 A, L = 1 mH IC = 2.5 A, IB1 = -IB2 = 0.25 A VBE(OFF) = -1.5 V, L = 180 µH, Clamped VCB = 100 V, IE = 0 VEB = 7.0 V, IC = 0 VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 3.0 A IC = 3.0 A, IB = 0.15 A IC = 4.0 A, IB = 0.2 A IC = 3.0 A, IB = 0.15 A IC = 4.0 A, IB = 0.2 A VCB = 10 V, IE = 0 , f = 1.0 MHz VCE = 10 V, IC = 0.5 A IC = 3.0 A, RL = 17 , IB1 = -IB2 = 0.15 A, VCC 50 V Refer to the test circuit. Fall time tf 0.25 100 100 60 0.15 0.3 0.9 1.2 70 150 0.1 1.0 0.3 0.5 1.2 1.5 V V V V pF MHz 200 400 MIN. 60 60 TYP. MAX. Unit V V Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time ICBO IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* Cob fT ton tstg 10 10 µA µA µs µs µs * Pulse test PW 350 µs, duty cycle 2% hFE CLASSIFICATION Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION (OHFWURGH &RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU or less 2 Data Sheet D15605EJ3V0DS 2SC4815 TYPICAL CHARACTERISTICS (Ta = 25°C) ° 7RWDO 3RZHU 'LVVLSDWLRQ 37 : $PELHQW 7HPSHUDWXUH 7D °& ,& 'HUDWLQJ G7 &DVH 7HPSHUDWXUH 7F °& 6LQJOH SXOVH 7UDQVLHQW 7KHUPDO 5HVLVWDQFH 5WKMD °&: &ROOHFWRU